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Aging-free InP substrates ready for molecular beam epitaxial growth of InAlAs/InGaAs heterostructures (1993)

Katsura, S. ; Sugiyama, Y. ; Oda, O. ; [et al.]

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 62 (1993), S. 1910-1912

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ISSN: 1077-3118

Source: AIP Digital Archive

Topics: Physics

Notes: Aging-free InP substrates ready for molecular beam epitaxy have been developed by the inert gas packaging technique. The surface degradation of the InP substrate after chemical cleaning was evaluated by the quality of the 2DEG heterostructure grown on the substrate. The InP substrate in a package filled with nitrogen gas was used for MBE growth. The Hall mobility of an InAlAs/InGaAs heterostructure directly grown on the InP substrate without any pretreatment or chemical etching is larger than 10 000 cm2 /V s at 300 K. There are no aging effects on the sample stored even after six months.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.109540

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