ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Data are presented demonstrating, in "wet'' oxidation, anisotropic oxide formation at p-n junction edges in AlxGa1−xAs-GaAs quantum well heterostructures (QWHs). The QWH high gap AlxGa1−xAs upper confining layer is oxidized via H2O vapor at elevated temperatures (425–525 °C). The higher energy portion of "blackbody'' radiation (the furnace ambient) at these temperatures generates sufficient electron-hole pairs to drive anodic oxidation at the edge of a QWH p-n junction. The anisotropic oxidation, on the p-type side of the junction, and possible reaction mechanisms are described.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.109487