ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
The structure of In0.52Al0.48As films grown on InP (100) by molecular beam epitaxy, at growth temperatures in the range of 530–590 °C, are analyzed by transmission electron microscopy. The existence of contrast inhomogeneities along the 〈010〉 fcc soft directions, the appearance of which depends on the temperature and the distance to the substrate, is reported. It is shown that these contrast irregularities in InAlAs are related directly to the existence of precipitates in the InAlAs/InP interface, whose origin can be found in the formation of an InAs layer under an As-stabilized InP surface.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.109436