ALBERT — All Library Books, journals and Electronic Records Telegrafenberg

Hits per page

hit 1 - 1 | 1 hit

Select All Export

Electronic Resource

Fabry–Perot reflectance modulator for 1.3 μm from (InAlGa)As materials grown at low temperature (1993)

Fritz, I. J. ; Hammons, B. E. ; Howard, A. J. ; [et al.]

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 62 (1993), S. 919-921

add to mindlist on the mindlist

Details

ISSN: 1077-3118

Source: AIP Digital Archive

Topics: Physics

Notes: We report the first all-semiconductor Fabry–Perot-cavity reflectance modulators operating at wavelengths of 1.32–1.33 μm. These devices were grown on a GaAs substrate using an intermediate, linearly graded InGaAs buffer layer terminating in an In0.33Ga0.67As layer. The Bragg reflector stacks of the Fabry–Perot structure are composed of InGaAs and InAlAs layers lattice matched to the buffer, and the active cavity region is an In0.4Ga0.6As/In0.26Al0.35Ga0.39As strained-layer superlattice. The key to obtaining device-quality material was low temperature growth (∼400 °C) of the entire structure. For a device with a 0.38-μm-thick active region and a 4 dB insertion loss, we obtained a contrast ratio of ∼3:1 at 4 V bias.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.108519

	Location	Call Number	Expected	Availability

Others were also interested in ...

Paper (German National Licenses)

Fulltext

hit 1 - 1 | 1 hit