Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
63 (1993), S. 3344-3346
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Very good quality of polycrystalline diamond films with different major facets were grown on the Si(100) substrates at different position of the plasma ball in a microwave plasma enhanced chemical vapor deposition chamber. Pt/BF+2 ion implanted polycrystalline diamond contacts were fabricated to examine the effect of diamond facets on their electrical properties. The Pt/diamond contact exhibited Schottky characteristics for the diamond film with major facet (100). In contrast, the Pt/diamond contact exhibited ohmic behavior for the diamond film with major facet (111). The I-V characteristics of the Pt/BF+2 ion implanted polycrystalline diamond contacts were not reliable if the diamond facet factor was not considered.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.110165
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