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Spatial resolution of selectively deposited diamond stripes on ion implanted Si(100) (1994)

Huang, J. T. ; Lin, S. J. ; Hwang, J. ; [et al.]

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 64 (1994), S. 73-75

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ISSN: 1077-3118

Source: AIP Digital Archive

Topics: Physics

Notes: Diamond stripes were successfully grown on the P+ ion implanted Si(100) substrate without the diamond abrasives pretreatment. The pattern of a transmission line model (TLM) was used to define the shape of the diamond stripes on Si(100). Lateral resolution of diamond stripes depended on the thickness of SiO2 on the patterned Si(100) substrate. The width of each diamond stripe was about the same as that of the corresponding SiO2 open window for the SiO2 layer of 18 000 and 9000 A(ring). A critical SiO2 thickness existed for diamond stripe deposition on the implanted Si(100), below which good spatial resolution of diamond stripes could not be achieved.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.110872

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