ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Data are presented demonstrating improved laser operation of AlxGa1−xAs-GaAs-InyGa1−yAs quantum well heterostructures modified with buried native oxide current-blocking windows. The windows are formed by low temperature (425 °C) anisotropic "wet'' oxidation of an Al0.9Ga0.1As layer exposed at the facets of metallized laser bars. These window devices operate continuously to powers as high as 248 mW/facet (uncoated, ∼10.5 μm aperture), a ∼25% improvement over nonwindow devices.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.111660