ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
CBr4 and CCl4 have been investigated as carbon doing sources for deposition of AlAs:C by metalorganic molecular-beam epitaxy. Through the use of CBr4, hole concentrations up to 4.5×1019 cm−3 were achieved in as-deposited AlAs layers. Attempts to increase the hole concentration in as-grown material beyond this level resulted in a decrease in the hole concentration even though (SIMS) and (XRD) analysis show the carbon concentration to increase with increasing dopant flow. By annealing the AlAs after growth, the maximum achievable hole concentration could be increased to 1.1×1020 cm−3, which is the highest yet reported for AlAs:C. This increase in p after annealing is believed due to removal of hydrogen from the lattice which passivates the carbon acceptor. Neither carbon source increased the oxygen background beyond the level of ∼5×1017 cm−3 normally observed in AlAs grown under similar conditions. These compounds do introduce Cl and Br, and reduce the Al incorporation rate due to parasitic etching reactions with the adsorbed halogen. © 1994 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.112762
