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Microstructure of polycrystalline silicon films obtained by combined furnace and laser annealing (1995)

Carluccio, R. ; Stoemenos, J. ; Fortunato, G. ; [et al.]

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 66 (1995), S. 1394-1396

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ISSN: 1077-3118

Source: AIP Digital Archive

Topics: Physics

Notes: Amorphous Si films deposited by the low pressure chemical vapor deposition from disilane, and subsequently subjected to a combined furnace annealing at 600 °C/12 h and a sequential excimer laser annealing, results to polycrystalline silicon films with very large grains, low in-grain defect density, and smooth-free surface. Large but heavily defected grains are produced by the furnace annealing, the in-grain defects are mainly microtwins, which are eliminated by a combined liquid–solid state process induced by the laser annealing. The two-step annealing provides a very high quality polycrystalline material suitable for thin-film transistor application. © 1995 American Institute of Physics.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.113212

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