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New CdTe photoconductor array detector for x-ray applications (1995)

Yoo, S. S. ; Sivananthan, S. ; Faurie, J. P. ; [et al.]

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 66 (1995), S. 2037-2039

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ISSN: 1077-3118

Source: AIP Digital Archive

Topics: Physics

Notes: A CdTe photoconductor array x-ray detector was grown using molecular beam epitaxy (MBE) on a Si(100) substrate. The temporal response of the photoconductor arrays is as fast as 21 ps rise time and 38 ps full width half-maximum (FWHM). The spatial resolution of the photoconductor was good enough to provide 75 μm FWHM using a 50 μm synchrotron x-ray beam. A substantial number of x-ray photons are absorbed effectively within the MBE CdTe layer as observed from the linear response up to 15 keV. These results demonstrate that MBE grown CdTe is a suitable choice of the detector materials to meet the requirements for x-ray detectors. © 1995 American Institute of Physics.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.113684

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