Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
68 (1996), S. 1643-1645
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
The thermal stability in vacuum of amorphous tetrahedrally coordinated carbon (a-tC) films grown on Si has been assessed by in situ Raman spectroscopy. Films were grown in vacuum on room-temperature substrates using laser fluences of 12, 22, and 45 J/cm2 and in a background gas of either hydrogen or nitrogen using a laser fluence of 45 J/cm2. The films grown in vacuum at high fluence ((approximately-greater-than)20J/cm2) show little change in the a-tC Raman spectra with temperature up to 800 °C. Above this temperature the films convert to glassy carbon (nanocrystalline graphite). Samples grown in vacuum at lower fluence or in a background gas (H2 or N2) at high fluence are not nearly as stable. For all samples, the Raman signal from the Si substrate (observed through the a-tC film) decreases in intensity with annealing temperature indicating that the transparency of the a-tC films is decreasing with temperature. These changes in transparency begin at much lower temperatures (∼200 °C) than the changes in the a-tC Raman band shape and indicate that subtle changes are occurring in the a-tC films at lower temperatures. © 1996 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.115891
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