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Double acceptor doped Ge: A new medium for inter-valence-band lasers (1996)

Bründermann, E. ; Linhart, A. M. ; Reichertz, L. ; [et al.]

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 68 (1996), S. 3075-3077

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ISSN: 1077-3118

Source: AIP Digital Archive

Topics: Physics

Notes: We report on intervalence-band laser emission from Be- and Zn-doped germanium crystals. The duty cycle of 10−3 at a repetition rate of 1 kHz is one order of magnitude larger than the highest duty cycle reported for p-Ge lasers doped by group II acceptors. This improvement is due to the much larger hole binding energy of double acceptors Be and Zn which results in a strong reduction of the internal absorption of the generated far-infrared radiation. Laser action has been achieved with crystal volumes as small as 0.04 cm−3, and a laser pulse length of 25 μs has been reached. Germanium crystals doped with these acceptors may offer an opportunity for achieving the ultimate goal of continuous wave operation. © 1996 American Institute of Physics.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.116427

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