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Synthesis of epitaxial SnxGe1−x alloy films by ion-assisted molecular beam epitaxy (1996)

He, Gang ; Atwater, Harry A.

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 68 (1996), S. 664-666

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ISSN: 1077-3118

Source: AIP Digital Archive

Topics: Physics

Notes: In this letter, we report the synthesis of epitaxial SnxGe1−x/Ge/Si(001) with compositions up to x=0.34 by ion-assisted molecular beam epitaxy with 30–100 eV Ar+ ions produced by an electron cyclotron resonance ionization source with ion to atom flux ratios of the order of unity in the substrate temperature range of 120–200 °C. High flux low energy ion beam irradiation greatly inhibits Sn segregation without interrupting epitaxy. © 1996 American Institute of Physics.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.116502

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