Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
69 (1996), S. 85-87
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
We have investigated the transport properties of a field-effect transistor (FET) with a composite quantum well, which consists of two adjacent semiconductor quantum wells, GaSb and InAs, sandwiched by AlSb barriers. This FET shows a novel V-shaped transfer characteristic, which is a direct result of the switching between electron and hole channels.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.118128
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