Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
69 (1996), S. 2737-2739
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
On Si-implanted n-type GaN, a nonalloyed Ti/Al metallization has been found to form an Ohmic contact that has a specific contact resistance as low as 1.0×10−5 Ω cm2. The Ohmic character is believed to be caused by the 1120 °C implant activation anneal which generates nitrogen vacancies that leave the surface heavily n type. This theory is indirectly confirmed on unimplanted n-type GaN by comparing the rc of nonalloyed Ti/Al on unannealed GaN with that of nonalloyed Ti/Al on 1120 °C annealed GaN. The former has rectifying electrical characteristics, while the latter forms an Ohmic contact with an rc=1.3×10−3 Ω cm2. © 1996 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.117695
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