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Biaxially aligned buffer layers of cerium oxide, yttria stabilized zirconia, and their bilayers (1997)

Gnanarajan, S. ; Katsaros, A. ; Savvides, N.

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 70 (1997), S. 2816-2818

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ISSN: 1077-3118

Source: AIP Digital Archive

Topics: Physics

Notes: Biaxially aligned cerium oxide (CeO2) and yttria stabilized zirconia (YSZ) films were deposited on Ni-based metal (Hastelloy C276) substrates held at room temperature using ion beam assisted (IBAD) magnetron deposition with the ion beam directed at 55° to the normal of the film plane. In addition, we achieved, room-temperature epitaxial growth of CeO2 by bias sputtering to form biaxially aligned CeO2/YSZ bilayers. The crystalline structure and in-plane orientation of films was investigated by x-ray diffraction techniques. Both the IBAD CeO2 and YSZ films, and the CeO2/YSZ bilayers have a (111) pole in the ion beam direction. © 1997 American Institute of Physics.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.119017

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