Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
70 (1997), S. 3425-3427
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Ion implantation induced surface expansion (swelling) of 6H-SiC was investigated through the measurement of the step height between implanted and unimplanted areas. The samples were irradiated at room temperature with 500 keV Al+ ions in the dose range 1.25×1014–3×1015 ions cm−2. Swelling was related to dose and the area density of ion-induced damage measured by Rutherford backscattering channeling technique. The observed trend is consistent with the hypothesis that the volume expansion of the ion damaged crystal is proportional to the area density of displaced atoms, plus an additional relaxation occurring at the onset of the crystalline to amorphous transition. © 1997 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.119191
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