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Analysis of polarization anisotropy along the c axis in the photoluminescence of wurtzite GaN (1997)

Domen, K. ; Horino, K. ; Kuramata, A. ; [et al.]

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 71 (1997), S. 1996-1998

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ISSN: 1077-3118

Source: AIP Digital Archive

Topics: Physics

Notes: The polarization of photoluminescence (PL) was investigated on (11¯00) GaN grown by metalorganic vapor phase epitaxy. We found that the PL intensity and wavelength have polarization dependence parallel and perpendicular to the c axis. We quantitatively analyzed the dependence and found that, since the crystal field of wurtzite GaN along the c axis is strong enough to fix the |z〉 axis of p functions at the c axis, the difference in symmetry between three valence bands appears as the polarization anisotropy in radiative emission, even in bulk GaN. © 1997 American Institute of Physics.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.119766

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