Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
72 (1998), S. 1498-1500
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
We report on a semiconductor superlattice oscillator for generation of millimeter waves (frequency 65 GHz). The main element of the oscillator is a doped short-period GaAs/AlAs superlattice with negative differential conductance. The oscillator is due to current oscillations caused by charge density domains. The oscillator delivered, at an efficiency of 0.2% for the conversion of electrical power to radiation power, a power of 100 μW in a bandwidth of the order of 200 kHz. © 1998 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.121038
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