Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
72 (1998), S. 1846-1847
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
In this letter, we study Ta/parylene-F (PA–F) buried interfaces using x-ray photoelectron spectroscopy. We found that the Ta–F bond was formed at the Ta/PA–F interface after depositing a layer of thin Ta film (〈50 Å). For the Ar+ or O2 plasma pretreated PA–F surface, in addition to the Ta–F bond, a Ta–C bond was observed at the buried interface after Ta metallization. The Ta–C bond may be responsible for the enhancement of Ta/PA–F adhesion. © 1998 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.121202
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