Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
73 (1998), S. 2405-2407
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
We report on the temporal and the frequency response of metal-semiconductor-metal ultraviolet photodetectors fabricated on single-crystal GaN. The best devices show a fast 10%–90% rise time of ∼23 ps implying a bandwidth of 〉15 GHz. These time domain data have been corroborated by direct measurement of the power spectral content. From this a cutoff frequency, f3 dB, of ∼16 GHz has been obtained. Analysis in terms of reverse bias and geometric scaling indicates that the photodetectors are transit-time limited. Modeling of the temporal behavior indicates that a slow component in the time and frequency response data is a consequence of the hole drift velocity. © 1998 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.122448
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