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High-temperature properties of GaInAs/AlGaAs lasers with improved carrier confinement by short-period superlattice quantum well barriers (1998)

Schäfer, F. ; Mayer, B. ; Reithmaier, J. P. ; [et al.]

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 73 (1998), S. 2863-2865

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ISSN: 1077-3118

Source: AIP Digital Archive

Topics: Physics

Notes: The influence of the carrier confinement on the output characteristics of GaInAs/AlGaAs lasers was investigated. To improve the carrier confinement, AlGaAs/GaAs short-period superlattices were used as quantum well barriers. In comparison to lasers with GaAs barriers the structures with the modified barriers show improved temperature properties at low threshold current densities without deterioration of the internal quantum efficiency (〉95%). High characteristic temperatures (T0) well above 300 K were measured between 20 and 75 °C and laser operation up to 238 °C could be achieved. The large improvement in T0 is mainly attributed to the reduced thermionic emission of carriers out of the quantum well due to the increased barrier height and the carrier reflection above the barrier by the short-period superlattice. © 1998 American Institute of Physics.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.122611

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