Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
73 (1998), S. 806-808
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
The depth dependent strain relaxation in photolithographically defined and reactive ion etched Si/SiGe quantum wire and dot arrays is determined by high resolution grazing incidence x-ray diffraction. The laterally periodic structures were aligned along two orthogonal [110] and [1¯10] directions on the (001) surface. By recording reciprocal space maps around the (220) and (2¯20) reciprocal lattice points, the shape and in-plane strain could be determined independently of each other. Using triple axis diffractometry and changing the effective penetration depth of the x-ray radiation between 5 and 300 nm the strain relaxation in the wires and dots could be determined depth resolved. © 1998 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.122008
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