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An in-plane GaAs single-electron memory cell operating at 77 K (1999)

Yoo, K.-H.

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 74 (1999), S. 2073-2075

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ISSN: 1077-3118

Source: AIP Digital Archive

Topics: Physics

Notes: An in-plane single-electron memory cell operating at 77 K has been fabricated from a Si-doped thin GaAs film. This device utilizes an artificially fabricated floating node as a storage node and detects the charge stored on the floating node using a single-electron electrometer. Charging of the floating node is evidenced by a large peak in source–drain current as a function of control gate voltage, and is further confirmed by a discrete shift in the peak or threshold voltage. © 1999 American Institute of Physics.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.123761

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