ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Absolute electroluminescence intensities of InP/InGaAs heterostructures are monitored as a function of the position of the active layer from a mirror deposited on the semiconductor surface. The strong observed modulation is explained in terms of confinement of the electromagnetic field in the semi-infinite cavity delimited by the reflecting interface. This effect is shown to be a powerful probe of electron spatial distributions in the direction perpendicular to the layer plane, which allows minority ballistic electron mean free path, and hence femtosecond scattering times, to be precisely measured. © 1999 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.124289