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Spectral analysis of InGaAs/GaAs quantum-dot lasers (1999)

Smowton, P. M. ; Johnston, E. J. ; Dewar, S. V. ; [et al.]

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 75 (1999), S. 2169-2171

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ISSN: 1077-3118

Source: AIP Digital Archive

Topics: Physics

Notes: The cause of the unusual spectral distribution, often observed in InGaAs/GaAs quantum-dot lasers, is investigated by analyzing the spectra from devices fabricated with different substrate thickness (100–400 μm). Using a Fourier transform analysis to determine the optical path length, it is found that the measured modulation period correlates with the device thickness. Such a result provides evidence for spectral modulation mediated by the device structure rather than the quantum-dot material itself and is consistent with the idea that the modulation is due to a mode propagating in the transparent substrate. © 1999 American Institute of Physics.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.124954

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