Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
76 (2000), S. 1534-1536
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
We have directly measured the stress evolution during metal-organic chemical vapor deposition of AlGaN/GaN heterostructures on sapphire. In situ stress measurements were correlated with ex situ microstructural analysis to determine directly a critical thickness for cracking and the subsequent relaxation kinetics of tensile-strained AlxGa1−xN grown on GaN. Cracks appear to initiate the formation of misfit dislocations at the AlGaN/GaN interface, which account for the majority of the strain relaxation. © 2000 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.126087
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