Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
76 (2000), S. 1920-1922
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
We deposited epitaxial Ba0.4Sr0.6TiO3 (BST) films via laser ablation on MgO and LaAlO3 (LAO) substrates for tunable microwave devices. Postdeposition anneals (∼1100 °C in O2) improved the morphology and overall dielectric properties of films on both substrates, but shifted the temperature of maximum dielectric constant (Tmax) up for BST/LAO and down for BST/MgO. These substrate-dependent Tmax shifts had opposite effects on the room-temperature dielectric properties. Overall, BST films on MgO had the larger maximum dielectric constant (ε/ε0≥6000) and tunability (Δε/ε≥65%), but these maxima occurred at 227 K. 30 GHz phase shifters made from similar films had figures of merit (ratio of maximum phase shift to insertion loss) of ∼45°/dB and phase shifts of ∼400° under 500 V (∼13 V/μm) bias, illustrating their utility for many frequency-agile microwave devices. © 2000 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.126212
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