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Diode-free magnetic random access memory using spin-dependent tunneling effect (2000)

Wang, Frank Z.

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 77 (2000), S. 2036-2038

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ISSN: 1077-3118

Source: AIP Digital Archive

Topics: Physics

Notes: A diode-free magnetic random access memory comprises two sets of conductive lines, an array of magnetic tunnel junctions at each intersection, and a peripheral circuitry. Such a simplified diode-free architecture described in this letter overcomes the diode-area constraint in the prior art and achieves a significant breakthrough in storage density. © 2000 American Institute of Physics.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.1313345

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