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Negative magnetoresistance produced by Hall fluctuations in a ferromagnetic domain structure (2001)

Barabash, Sergey V. ; Stroud, D.

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 79 (2001), S. 979-981

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ISSN: 1077-3118

Source: AIP Digital Archive

Topics: Physics

Notes: We present a model for a negative magnetoresistance (MR) that would develop in a material with many ferromagnetic domains even if the individual domains have no magnetoresistance and even if there is no boundary resistance. The negative MR is due to a classical current-distortion effect arising from spatial variations in the Hall conductivity, combined with a change in domain structure due to an applied magnetic field. The negative MR can exceed 1000% if the product of the carrier relaxation time and the internal magnetic field due to spontaneous magnetization is sufficiently large. © 2001 American Institute of Physics.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.1392978

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