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ZnO nanobelts grown on Si substrate (2002)

Li, Y. B. ; Bando, Y. ; Sato, T. ; [et al.]

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 81 (2002), S. 144-146

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ISSN: 1077-3118

Source: AIP Digital Archive

Topics: Physics

Notes: Using infrared irradiation to heat an industrial brass (Cu–Zn alloy) disk in moderate vacuum, ZnO nanobelts were directly prepared on a Si substrate. The nanobelts had a single-crystal hexagonal structure and grew along the [0001] direction. The nanobelts had two distinct widths along their entire length. Photoluminescence measurement showed that the nanobelts had an intensive near-band ultraviolet emission at 379 nm. Large-area growth and high quality indicate that the prepared ZnO nanobelts have potential application in optoelectronic devices. © 2002 American Institute of Physics.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.1492008

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