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Lattice-imaging studies on intergrowth structures of silicon carbide (1980)

Singh, S. R. ; Singh, G.

[S.l.] : International Union of Crystallography (IUCr)

Acta crystallographica 36 (1980), S. 779-784

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ISSN: 1600-5724

Source: Crystallography Journals Online : IUCR Backfile Archive 1948-2001

Topics: Chemistry and Pharmacology , Geosciences , Physics

Notes: Bright-field lattice images of three syntactically coalesced polytypes of SiC were taken with a view to deriving structural information. A high-period structure 400H is found to consist of seven unit cells of 150R and one unit cell of 150RA. The 150R structure is built up of ten 15R unit cells; consecutive 15R subunits in obverse and reverse orientation give rise to sudden changes in contrast in the image. Complete structure determination of 150R and 150RA is thus possible. The structures were confirmed by comparing the calculated and observed X-ray intensities. An imaging code was established which helped in the structure determination of the 400H polytype.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1107/S0567739480001568

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