ISSN:
1432-1858
Source:
Springer Online Journal Archives 1860-2000
Topics:
Electrical Engineering, Measurement and Control Technology
,
Technology
Notes:
Abstract Modular fabrication of polysilicon surface-micromachined structures after completion of a conventional CMOS electronic process is described. Key process steps include tungsten metallization with contact diffusion barriers, LPCVD oxide and nitride passivation of the CMOS, rapid thermal processing for stress-relief annealing of the structural polysilicon film, implementation of a sacrificial spin-on-glass planarization, and the final microstructure release in hydrofluoric acid. Modularity of the process enables independent modification of either the CMOS or the microstructure process sequences. This technology is used in the fabrication of various types of sensors and actuators.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1007/BF01367758
