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Ge diffusion into GaAs by pulsed laser irradiation (1988)

Garcia, B. J. ; Martinez, J. ; Piqueras, J. ; [et al.]

Springer

Applied physics 46 (1988), S. 191-196

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ISSN: 1432-0630

Keywords: 61.70.Tm ; 79.20.Ds ; 72.80.Ey

Source: Springer Online Journal Archives 1860-2000

Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics

Notes: Abstract Ge diffusion into GaAs from thin evaporated layers as sources is reported. Irradiation with aQ-switched ruby laser gives rise ton-type diffused layers of a thickness from 240 to 710 Å. A strong compensation of the diffused layers, that cannot be removed by thermal annealing, was observed. From the present experimental results it can be inferred that the diffusion coefficient increases at the melting point by 5 to 6 orders of magnitude.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1007/BF00939263

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