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Recombination kinetics in nonlinear defective LiB3O5 crystals (1998)

Ogorodnikov, I. N. ; Porotnikov, A. V. ; Kruzhalov, A. V. ; [et al.]

Springer

Physics of the solid state 40 (1998), S. 1817-1822

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ISSN: 1063-7834

Source: Springer Online Journal Archives 1860-2000

Topics: Physics

Notes: Abstract A study of recombination kinetics in LiB3O5 (LBO) crystals by time-resolved luminescence and absorption spectroscopy is reported. An investigation of the kinetics of transient optical absorption (TOA) and luminescence under ns-scale electron-beam excitation performed within a broad temperature range of 77–500 K and a 1.2–5-eV spectral interval has established that the specific features in the recombination kinetics observed in LBO involve electronic, B2+, and hole, O−, trapping centers. The TOA and luminescence kinetics, as well as their temperature dependence, are interpreted by a model of competing hole centers. Relations connecting the kinetics parameters and the temperature dependence to the parameters of the main LBO point defects are presented.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1134/1.1130664

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