ISSN:
1090-6487
Keywords:
72.20.E
;
72.80.Jc
Source:
Springer Online Journal Archives 1860-2000
Topics:
Physics
Notes:
Abstract The hopping conductivity σ3 has been studied in samples of slightly counterdoped crystalline Si: B with a boron concentration of 2×1016 cm−3〈N〈1017 cm−3 and a compensation of 10−4≤K≤10−2. It is found that at K≤10−3 the activation energy ε3 is not lower (as it must be according to classical notions at finite K) but larger than the value εN=e 2 N 1/3/κ, where e is the electronic charge and κ is the dielectric constant. With decreasing N, the energy ε3 drops slower and, with decreasing K, grows faster than follows from the standard theory. At K≤10−4, ε3 is higher than ε N by a factor of 1.5–2. The result is explained by the effect of the overlap between wave functions of neighboring impurity centers on the structure of the impurity band.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1134/1.568267
