ISSN:
1573-7357
Source:
Springer Online Journal Archives 1860-2000
Topics:
Physics
Notes:
Abstract The photoluminescence, the temperature dependence of the electrical conductivity (0.4〈T〈300 K), the magnetoresistance and the Hall effect were investigated in selectively doped GaAs/In xGa1−xAs multiple quantum well (MQW) structures. The dependencies of the electron mobility on the width of the quantum wells and on temperature were measured. It is shown that in narrow MQW structures the value of mobility is restricted by interface roughness scattering. In wider MQW structures, the alloy scattering has a detrimental effect on the low magnetic field transport properties. A negative magnetoresistance was observed in low magnetic fields. From a detailed comparison between theory of weak localisation and experiment the wave function relaxation time τϕ and its temperature dependence were evaluated. The quantum Hall effect was investigated in all samples in the temperature interval 0.4 K ÷ 4.2 K in magnetic fields up to 40 T.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1007/BF00755127
