ISSN:
1588-2780
Source:
Springer Online Journal Archives 1860-2000
Topics:
Chemistry and Pharmacology
,
Energy, Environment Protection, Nuclear Power Engineering
Notes:
Abstract Neutron activation analysis is used to study the process of Cu gettering in a silicon wafer in which differently doped and disordered regions are present. The results show a strong preference of the copper atoms to be concentrated in the n+(p+) and in the n+ regions. The effectivity of the gettering process can be increased by thermal growth of the defects present in the boron implanted layers.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1007/BF02050512