ISSN:
1572-9540
Source:
Springer Online Journal Archives 1860-2000
Topics:
Physics
Notes:
Abstract Longitudinal-field muon-spin depolarization rates in high-purityGe and semiinsulatingGaAs are reported and compared to similar data for intrinsicSi. Depolarization onset temperatures provide a comparison of charge carrier concentrations leading to rapid charge exchange and a shift in the onset, for n-typeGaAs verifies anelectron process. The temperature dependence of the low-field rate constants imply more complicated dynamics inGe than observed earlier inSi. Features near 750K inGaAs∶Te appear consistent with dissociation of aMu-Te pair.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1007/BF02068968