ISSN:
0271-2091
Keywords:
Finite Elements
;
Transient Flows
;
Three-dimensional Flows
;
Natural Convection
;
Interfaces Oscillatory Flows
;
Crystal Growth
;
Semiconductors
;
Gallium Arsenide
;
Engineering
;
Engineering General
Source:
Wiley InterScience Backfile Collection 1832-2000
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
We study the transient motion of the solidification front during the growth of semiconductor crystals in the horizontal Bridgman geometry. The calculation is based on a two-dimensional flow. We use finite elements which deform with the motion of the interface. The energy equation is coupled with the isothermal constraint of the interface in an implicit transient algorithm. Several examples show the oscillatory motion of the interface caused by the periodic flow of the melt, and they reveal the importance of the growth rate on the shape of the interface.
Additional Material:
19 Ill.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1002/fld.1650070204
