ISSN:
1057-9257
Keywords:
Polysilicon
;
Crystallinity
;
Boron-doped
;
LPCVD
;
In situ doping
;
Chemistry
;
Polymer and Materials Science
Source:
Wiley InterScience Backfile Collection 1832-2000
Topics:
Electrical Engineering, Measurement and Control Technology
,
Physics
Notes:
Results are presented for the degree of crystallinity, determined by Raman spectroscopy, of in situ B-doped LPCVD polysilicon as a function of deposition temperature. The results are compared with those reported in the literature for P-doped polysilicon and it is found that for B doping full crystallinity of the layer is achieved at a significantly lower deposition temperature than is required for P doping. An attempt to understand this effect is made in terms of a quantitative model which allows an estimation of values for silicon self-diffusivity and which is in accord with the experimental observations.
Additional Material:
4 Ill.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1002/amo.860020305
