Digitale Medien
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
91 (2002), S. 6206-6208
ISSN:
1089-7550
Quelle:
AIP Digital Archive
Thema:
Physik
Notizen:
Threshold voltage shift induced on parasitic metal–insulator–semiconductor field-effect transistors by bias-temperature stress in the presence of double-layer insulating stacks is studied as a function of the stack composition and measurement conditions. It is shown that the threshold-voltage shift (ΔVT) closely depends on the conductance difference between the two insulating layers. This shift is completely reversible being larger if the conductance difference is higher and more charge is injected into the dielectric stack. In the case of Si3N4/SiO2 insulating stacks, it is further demonstrated that the voltage shift is caused by charges transferred via the nitride and accumulated in the nitride and/or at the nitride/oxide interface. A first-order charge transfer model presented here explains the observed voltage shift. © 2002 American Institute of Physics.
Materialart:
Digitale Medien
URL:
http://dx.doi.org/10.1063/1.1467626
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