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    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 6206-6208 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Threshold voltage shift induced on parasitic metal–insulator–semiconductor field-effect transistors by bias-temperature stress in the presence of double-layer insulating stacks is studied as a function of the stack composition and measurement conditions. It is shown that the threshold-voltage shift (ΔVT) closely depends on the conductance difference between the two insulating layers. This shift is completely reversible being larger if the conductance difference is higher and more charge is injected into the dielectric stack. In the case of Si3N4/SiO2 insulating stacks, it is further demonstrated that the voltage shift is caused by charges transferred via the nitride and accumulated in the nitride and/or at the nitride/oxide interface. A first-order charge transfer model presented here explains the observed voltage shift. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
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