Publication Date:
2018-06-06
Description:
We have been investigating the effect of screw dislocation and other structural defects on the electrical properties of SiC. SiC is a wide-bandgap semiconductor that is currently received much attention due to its favorable high temperature behavior and high electric field breakdown strength. Unfortunately, the current state-of-the-art crystal growth and device processing methods produce material with high defect densities, resulting in a limited commercial viability
Keywords:
Solid-State Physics
Type:
16th Space Photovoltaic Research and Technology Conference; 183-188; NASA/CP-2001-210747/REV1
Format:
application/pdf