Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
60 (1986), S. 991-1001
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
The metallurgical examination of solid-state reaction between nickel thin films and single-crystal GaAs substrates and the resultant electrical properties of the contacts are reported. Annealing at 100–300 °C in forming gas led to formation of a metastable hexagonal phase Ni2GaAs which was stabilized due to its epitaxial growth on (001) and (111) GaAs substrates, as follows: (101¯1)Ni2GaAs(parallel)(001)GaAs and (0001)Ni2GaAs(parallel)(111)GaAs. Nickel atoms were found to be the dominant diffusing species during the ternary phase growth. Ni2GaAs is stable on (111)GaAs up to at least 600 °C, compared to 350 °C on (001)GaAs. The larger stability on (111) is explained by the better epitaxial match found in this case. Reaction on (001)GaAs in the temperature range of 350–550 °C resulted in decomposition of Ni2GaAs by NiAs precipitation. After annealing at 600 °C the reacted film was composed of two phases: NiGa and NiAs. The electrical properties of the contacts were correlated to the phase interfacing the substrate. The Ni2GaAs formed rectifying contact with a barrier height of 0.84 eV, whereas when NiGa and NiAs were at the interface an ohmic behavior was observed.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.337343
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