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High-temperature preservation of InP surface corrugations for distributed feedback lasers (1988)

Knight, D. G. ; Ingrey, S. J. ; Benyon, W. ; [et al.]

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 64 (1988), S. 3792-3798

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ISSN: 1089-7550

Source: AIP Digital Archive

Topics: Physics

Notes: Consistent preservation of 〈01¯1¯〉-oriented grating corrugations with 2850-A(ring) period and 1500-A(ring) height on (100) InP substrates has been achieved during thermal cycling at 660 °C for 60 min in a H2 ambient, using roughened GaAs cover slices. It is found that transport of Ga and As causes the formation of a graded 25-A(ring)-thick InGaAsP alloy on the surface of the gratings, as detected by Auger and x-ray photoelectron spectroscopic analysis. This preservation technique eliminates the need for lower-temperature crystal growth of distributed feedback laser wafers by liquid-phase epitaxy (LPE). Successful growth of distributed feedback laser wafers using conventional high-temperature LPE is demonstrated.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.341385

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