Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
66 (1989), S. 459-462
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Strained GaAs/InGaAs/AlGaAs quantum-well structures grown on GaAs have been removed from their original substrates by a lift-off process and bonded directly to glass or SiO2-coated Si substrates. Both undoped and modulation-doped structures have been characterized before and after transfer by Hall measurements, variable temperature x-ray diffraction, and photoluminescence. The bonded structures retain the high quality of the as-grown layers.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.343850
|
Location |
Call Number |
Expected |
Availability |