Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
70 (1991), S. 1712-1717
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
An electron cyclotron resonance-excited Ar plasma completely removes CFx residue on Si resulting in a clean surface that is free of native Si oxide. In situ x-ray photoelectron spectroscopy verifies the absence of C and F on the surface, and the presence of what is thought to be a small amount of adsorbed or interstitially implanted O. Mechanistically, the Ar ion bombardment affects a nearly instantaneous ablation of F from the CFx surface followed in succession by a low average energy (100 eV) sputtering of the C-rich remnant, the native Si oxide, and the Si substrate. The etching rate of thick CFx residue is approximately 15 nm/min without any heat applied to the substrate.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.349541
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