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Optical properties of semiconductor lasers with hydrostatic pressure (1993)

Patel, D. ; Menoni, C. S. ; Temkin, H. ; [et al.]

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 74 (1993), S. 737-739

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ISSN: 1089-7550

Source: AIP Digital Archive

Topics: Physics

Notes: The pressure dependence of the stimulated emission of a 1.3 μm In1−xGaxAsyP1−y (y=0.6) buried heterostructure laser has been measured up to 2.5 GPa. In this pressure range the laser output was tuned over 200 nm. The laser output energy varied linearly with pressure at a rate of (80±3) meV/GPa, corresponding to variation of the direct band gap of the InGaAsP active layer with pressure. From the measured energy shift and from calculations of the fractional volume change in the active layer for the strain conditions of the epilayer, a hydrostatic deformation potential of (−5.7±0.1) eV was obtained.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.355242

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