Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
76 (1994), S. 3929-3931
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Polycrystalline diamond films have been annealed under O2 at 600 °C, or have been dipped in a H2SO4/CrO3 solution. Both treatments result in the formation of a thin electrically insulating layer at the top of the films. Subsequent metallization results in the formation of a metal/insulator/diamond tunnel diode with a potential barrier for holes of 0.85 eV, and with a Fermi level localized at about 0.45 eV above the diamond valence band.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.357407
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